issue 1 - september 2006 1 www.zetex.com ? zetex semiconductors plc 2006 zxtn07012eff 12v, sot23f, npn high gain power transistor summary bv ceo > 12v bv eco > 3v i c(cont) = 4.5a v ce(sat) < 70mv @ 1a r ce(sat) = 43m p d = 1.5w complementary part number zxtp07012eff description this low voltage npn transistor has been designed for applications requiring high gain and very low saturation voltage. the sot23f package is pin compatible with th e industry standard sot23 footprint but offers lower profile and higher dissipation for ap plications where power density is of utmost importance. features ? low profile sot23f package low saturation voltage high gain high power dissipation applications led driver boost converter logic interface motor drive ordering information device marking 1d3 device reel size (inches) tape width (mm) quantity per reel ZXTN07012EFFTA 7 8 3000 c e b c e b pinout - top view
zxtn07012eff issue 1 - september 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high cover age of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high cover age of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 v emitter-collector voltage (reverse blocking) v eco 3v emitter-base voltage v ebo 7v continuous collector current (c) i c 4.5 a base current i b 1a peak pulse current i cm 10 a power dissipation at t amb =25c (a) 0.84 w linear derating factor p d 6.72 mw/c power dissipation at t amb =25c (b) 1.34 w linear derating factor p d 10.72 mw/c power dissipation at t amb =25c (c) 1.50 w linear derating factor p d 12.0 mw/c power dissipation at t amb =25c (d) 2.0 w linear derating factor p d 16.0 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 149 c/w junction to ambient (b) r ja 93 c/w junction to ambient (c) r ja 83 c/w junction to ambient (d) r ja 60 c/w
zxtn07012eff issue 1 - september 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
zxtn07012eff issue 1 - september 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 20 40 v ic = 100 a collector-emitter breakdown voltage (base open) bv ceo 12 17 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo 78.3 vi e = 100 a emitter-collector breakdown voltage (reverse blocking) bv ecx 68.2 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 3.0 5.3 v i e = 100 a, collector-base cut-off current i cbo <1 50 20 na a v cb = 16v v cb = 16v, t amb = 100c emitter-base cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 25 40 mv i c = 100ma, i b = 0.5ma (*) 60 85 mv i c = 1a, i b = 10ma (*) 50 70 mv i c = 1a, i b = 100ma (*) 105 150 mv i c = 2a, i b = 20ma (*) 215 320 mv i c = 4.5a, i b = 45ma (*) base-emitter saturation voltage v be(sat) 945 1050 mv i c = 4.5a, i b = 45ma (*) base-emitter turn-on voltage v be(on) 850 950 mv i c = 4.5a, v ce = 2v (*) static forward current transfer ratio h fe 500 800 1500 i c = 0.1a, v ce = 2v (*) 400 650 i c = 2a, v ce = 2v (*) 330 530 i c = 4.5a, v ce = 2v (*) 140 230 i c = 10a, v ce = 2v (*) transition frequency f t 150 220 mhz i c = 50ma, v ce = 5v f = 50mhz input capacitance c ibo 229 pf v eb = 0.5v, f = 1mhz (*) output capacitance c obo 40 50 pf v cb = 10v, f = 1mhz (*) delay time t d 26.8 ns v cc = 10v. i c = 500ma, i b1 = i b2 = 50ma. rise time t r 14.2 ns storage time t s 250 ns fall time t f 67.7 ns
zxtn07012eff issue 1 - september 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
zxtn07012eff issue 1 - september 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23f note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches. dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 0.80 1.00 0.0315 0.0394 e 2.30 2.50 0.0906 0.0984 a1 0.00 0.10 0.00 0.0043 e1 1.50 1.70 0.0590 0.0669 b 0.35 0.45 0.0153 0.0161 e2 1.10 1.26 0.0433 0.0496 c 0.10 0.20 0.0043 0.0079 l 0.48 0.68 0.0189 0.0268 d 2.80 3.00 0.1102 0.1181 l1 0.30 0.50 0.0153 0.0161 e 0.95 ref 0.0374 ref r 0.05 0.15 0.0019 0.0059 e1 1.80 2.00 0.0709 0.0787 o 0 12 0 12 d l1 c a1 b r bb e1 e e1 e l a e2
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